(Hong Kong)
Product Summary
The MG150Q2YS50 is a Silicon N Channel IGBT for high power switching applications and motor control applications.
Parametrics
MG150Q2YS50 maximum ratings: (1)Collector-emitter voltage, VCES: 1200 V; (2)Gate-emitter voltage, VGES: ±20 V; (3)Collector current; (4)1ms, ICP (25℃ / 80℃): DC IC(25℃ / 80℃): 200 / 150 A; 400 / 300A; (5)Forward current: DC IF: 150A; 1ms, IFM: 300 A; (6)collector power dissipation(Tc = 25℃), PC :1250 W; (7)Junction temperature, Tj: 150 ℃; (8)Storage temperature range, Tstg: -40 ~ 125 ℃; (9)Isolation voltage, VIsol: 2500 (AC 1 min.) V; (10)Screw torque (Terminal / mounting): 3 / 3 N·m.
Features
MG150Q2YS50 features: (1)High input impedance; (2)High speed: tf = 0.3μs (Max) @Inductive load; (3)Low saturation voltage: VCE (sat) = 3.6V (Max); (4)Enhancement-mode; (5)Includes a complete half bridge in one package.; (6)The electrodes are isolated from case.
Diagrams
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