(Hong Kong)
Product Summary
The 2SK583 is a N-Channel Enhancement Silicon MOSFET for analog switches, low-pass filters.
Parametrics
2SK583 absolute maximum ratings: (1)Drain-to-Source Voltage, VDS: 50 V; (2)Gate-to-Source Voltage, VGS: ±12 V; (3)Drain Current, ID: 200 mA; (4)Drain Current(Pulse), IDP: 300 mA; (5)Allowable Power Dissipation, PD: 600 mW; (6)Channel Temperature, Tch: 125℃; (7)Storage Temperature, Tstg: –55 to +125℃.
Features
2SK583 features: (1)Large |yfs|; (2)Enhancement type; (3)Small ON-resistance.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 2SK583 |
Other |
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Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
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2SK546 |
Other |
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Data Sheet |
Negotiable |
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2SK583 |
Other |
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Data Sheet |
Negotiable |
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2SK596 |
Other |
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Data Sheet |
Negotiable |
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2SK596S-B |
ON Semiconductor |
JFET NCH J-FET |
Data Sheet |
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2SK545-11D-TB-E |
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MOSFET J-FET N-CH CP |
Data Sheet |
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2SK544 |
Other |
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Data Sheet |
Negotiable |
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